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APTGT35DA120D1G

IGBT MODULE 1200V 55A 205W D1


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGT35DA120D1G
  • Package: D1
  • Datasheet: PDF
  • Stock: 581
  • Description: IGBT MODULE 1200V 55A 205W D1 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case D1
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 205W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 205W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 55A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 2.5nF
Turn On Time 280 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Turn Off Time-Nom (toff) 830 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 2.5nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet