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APTGT50H60T1G

Trans IGBT Module N-CH 600V 80A 12-Pin Case SP-1


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGT50H60T1G
  • Package: SP1
  • Datasheet: PDF
  • Stock: 312
  • Description: Trans IGBT Module N-CH 600V 80A 12-Pin Case SP-1 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.15nF @ 25V
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 176W
Terminal Position UPPER
Terminal Form THROUGH-HOLE
Pin Count 12
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 176W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 80A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 3.15nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Turn Off Time-Nom (toff) 310 ns
See Relate Datesheet