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APTGT75DA120D1G

IGBT MODULE 1200V 110A 357W D1


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGT75DA120D1G
  • Package: D1
  • Datasheet: PDF
  • Stock: 862
  • Description: IGBT MODULE 1200V 110A 357W D1 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case D1
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 357W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 357W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 110A
Current - Collector Cutoff (Max) 4mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 5.345μF
Turn On Time 390 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn Off Time-Nom (toff) 830 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 5345nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet