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APTGT75DH120T3G

Trans IGBT Module N-CH 1.2KV 110A 16-Pin Case SP-3


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGT75DH120T3G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 290
  • Description: Trans IGBT Module N-CH 1.2KV 110A 16-Pin Case SP-3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 36 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 16
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
ECCN Code EAR99
Max Power Dissipation 357W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X11
Qualification Status Not Qualified
Number of Elements 2
Configuration Asymmetrical Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 357W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 110A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 5.34nF
Turn On Time 335 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 5.34nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet