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APTGT75TL60T3G

IGBT MODULE 600V 100A 250W SP3


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGT75TL60T3G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 315
  • Description: IGBT MODULE 600V 100A 250W SP3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 36 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 32
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 16
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X16
Qualification Status Not Qualified
Number of Elements 4
Configuration Three Level Inverter
Case Connection ISOLATED
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 4.62nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 75A
Turn Off Time-Nom (toff) 310 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.62nF @ 25V
VCEsat-Max 1.9 V
RoHS Status RoHS Compliant
See Relate Datesheet