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APTGV50H120BTPG

Trans IGBT Module N-CH 1.2KV 75A/75A/70A/70A 21-Pin Case SP-6P


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGV50H120BTPG
  • Package: SP6
  • Datasheet: -
  • Stock: 812
  • Description: Trans IGBT Module N-CH 1.2KV 75A/75A/70A/70A 21-Pin Case SP-6P (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 6
Transistor Element Material SILICON
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 270W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 21
JESD-30 Code R-XUFM-X21
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 5
Configuration Boost Chopper, Full Bridge
Case Connection ISOLATED
Power - Max 270W
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 75A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.6nF
Turn On Time 140 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 610 ns
IGBT Type NPT, Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.6nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet