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  • APTM20UM03FAG

APTM20UM03FAG

MOSFET N-CH 200V 580A SP6


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTM20UM03FAG
  • Package: SP6
  • Datasheet: PDF
  • Stock: 164
  • Description: MOSFET N-CH 200V 580A SP6 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Power Dissipation-Max 2270W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.27kW
Turn On Delay Time 32 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.6m Ω @ 290A, 10V
Vgs(th) (Max) @ Id 5V @ 15mA
Input Capacitance (Ciss) (Max) @ Vds 43300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 580A Tc
Gate Charge (Qg) (Max) @ Vgs 840nC @ 10V
Rise Time 64ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 116 ns
Turn-Off Delay Time 88 ns
Continuous Drain Current (ID) 580A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 2320A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 3000 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2012
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 2
JESD-30 Code R-PUFM-X2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
See Relate Datesheet