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  • AUIRF1324WL

AUIRF1324WL

AUIRF1324WL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRF1324WL
  • Package: TO-262-3 Wide Leads
  • Datasheet: PDF
  • Stock: 644
  • Description: AUIRF1324WL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7630pF @ 19V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 200ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Factory Lead Time 16 Weeks
Contact Plating Tin
Vgs (Max) ±20V
Mount Through Hole
Fall Time (Typ) 110 ns
Mounting Type Through Hole
Package / Case TO-262-3 Wide Leads
Turn-Off Delay Time 75 ns
Number of Pins 3
Continuous Drain Current (ID) 240A
Transistor Element Material SILICON
Threshold Voltage 2V
Operating Temperature -55°C~175°C TJ
JEDEC-95 Code TO-262AA
Packaging Tube
Gate to Source Voltage (Vgs) 20V
Published 2011
Drain to Source Breakdown Voltage 24V
Series HEXFET®
JESD-609 Code e3
Nominal Vgs 2 V
Height 11.3mm
Part Status Active
Length 10.67mm
Width 4.83mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Radiation Hardening No
Number of Terminations 3
REACH SVHC No SVHC
ECCN Code EAR99
RoHS Status ROHS3 Compliant
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 18 ns
See Relate Datesheet