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  • AUIRF1405ZS

AUIRF1405ZS

MOSFET N-CH 55V 150A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRF1405ZS
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 323
  • Description: MOSFET N-CH 55V 150A D2PAK (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0049Ohm
Mounting Type Surface Mount
Drain to Source Breakdown Voltage 55V
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Pulsed Drain Current-Max (IDM) 600A
Height 4.826mm
Number of Pins 2
Length 10.668mm
Width 9.65mm
Transistor Element Material SILICON
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.9m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4780pF @ 25V
Current - Continuous Drain (Id) @ 25°C 150A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 110ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 82 ns
Turn-Off Delay Time 48 ns
Factory Lead Time 16 Weeks
Continuous Drain Current (ID) 150A
Contact Plating Tin
Threshold Voltage 2V
See Relate Datesheet