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AUIRF3004WL

AUIRF3004WL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRF3004WL
  • Package: TO-262-3 Wide Leads
  • Datasheet: PDF
  • Stock: 680
  • Description: AUIRF3004WL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 130 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 240A
Threshold Voltage 2V
JEDEC-95 Code TO-262AA
Factory Lead Time 16 Weeks
Gate to Source Voltage (Vgs) 20V
Contact Plating Tin
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Drain to Source Breakdown Voltage 40V
Package / Case TO-262-3 Wide Leads
Avalanche Energy Rating (Eas) 470 mJ
Number of Pins 3
Transistor Element Material SILICON
Nominal Vgs 2 V
Operating Temperature -55°C~175°C TJ
Height 11.3mm
Packaging Tube
Published 2011
Length 10.67mm
Series HEXFET®
JESD-609 Code e3
Width 4.83mm
Part Status Active
Radiation Hardening No
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
REACH SVHC No SVHC
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
RoHS Status ROHS3 Compliant
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m Ω @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9450pF @ 32V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Rise Time 220ns
See Relate Datesheet