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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRL2910STRRPBF IRL2910STRRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 0.03Ohm 100V SILICON N-Channel 26m Ω @ 29A, 10V 2V @ 250μA 3700pF @ 25V 140nC @ 5V 55A 55A Tc 100V 190A 520 mJ
    IRF3808STRRPBF IRF3808STRRPBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 16 ns 200W Tc 106A SWITCHING 0.007Ohm 68 ns SILICON N-Channel 7m Ω @ 82A, 10V 4V @ 250μA 5310pF @ 25V 220nC @ 10V 140ns 120 ns 20V 75V 75A 106A Tc 550A 10V ±20V
    IPB180N03S4LH0ATMA1 IPB180N03S4LH0ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2009 OptiMOS™ Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead 7 ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 9 ns 30V 250W Tc 180A 0.00095Ohm 60 ns SILICON N-Channel 0.95m Ω @ 100A, 10V 2.2V @ 200μA 23000pF @ 25V 300nC @ 10V 7ns 25 ns 16V 180A Tc 980 mJ 4.5V 10V ±16V
    IRF2804STRRPBF IRF2804STRRPBF Infineon Technologies $0.00
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    		 10 Weeks Tape & Reel (TR) 2003 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.002Ohm 40V SILICON N-Channel 2m Ω @ 75A, 10V 4V @ 250μA 6450pF @ 25V 240nC @ 10V 75A 75A Tc 40V 1080A 540 mJ 10V ±20V
    IPW60R280P6FKSA1 IPW60R280P6FKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 3 TO-247-3 Through Hole 38.000013g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 104W 12 ns 600V 252mOhm PG-TO247-3 104W Tc 13.8A 36 ns N-Channel 280mOhm @ 5.2A, 10V 4.5V @ 430μA 1190pF @ 100V 25.5nC @ 10V 6ns 20V 13.8A Tc 600V 1.19nF 10V ±20V 280 mΩ
    IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2005 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 10.31mm ROHS3 Compliant 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.57mm 9.45mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free Single 300W 18 ns 55V 300W Tc 100A 0.0056Ohm 98 ns SILICON N-Channel 4.4m Ω @ 80A, 10V 2V @ 250μA 5660pF @ 25V 230nC @ 10V 25ns 24 ns 20V 55V 100A Tc 400A 810 mJ 4.5V 10V ±20V
    IPA50R199CPXKSA1 IPA50R199CPXKSA1 Infineon Technologies $0.00
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    		 download Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 Through Hole 10.65mm ROHS3 Compliant 3 TO-220-3 Full Pack No SVHC 16.15mm 4.85mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 NO Not Qualified 1 TO-220AB ISOLATED Halogen Free Single 139W 35 ns 139W Tc 17A SWITCHING 0.199Ohm 80 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 660μA 1800pF @ 100V 45nC @ 10V 14ns 10 ns 20V 500V 550V 3 V 17A Tc 40A 10V ±20V
    IPW65R420CFDFKSA1 IPW65R420CFDFKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE 83.3W 10 ns 650V 83.3W Tc 8.7A SWITCHING 0.42Ohm 38 ns SILICON N-Channel 420m Ω @ 3.4A, 10V 4.5V @ 340μA 870pF @ 100V 32nC @ 10V 7ns 8 ns 20V 8.7A Tc 27A 227 mJ 10V ±20V
    AUIRF2804 AUIRF2804 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant No 3 TO-220-3 No SVHC 12.88mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300W 13 ns 2V 300W Tc 195A SWITCHING 130 ns SILICON N-Channel 2.3m Ω @ 75A, 10V 4V @ 250μA 6450pF @ 25V 240nC @ 10V 120ns 130 ns 20V 40V 270A 195A Tc 540 mJ 10V ±20V
    IPP034NE7N3GXKSA1 IPP034NE7N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 16 ns 75V 214W Tc 100A SWITCHING 40 ns SILICON N-Channel 3.4m Ω @ 100A, 10V 3.8V @ 155μA 8130pF @ 37.5V 117nC @ 10V 85ns 10 ns 20V 100A Tc 400A 640 mJ 10V ±20V
    IRFR3708TR IRFR3708TR Infineon Technologies $0.00
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    		 Tape & Reel (TR) 2000 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 87W Tc SWITCHING 0.0125Ohm 30V SILICON N-Channel 12.5m Ω @ 15A, 10V 2V @ 250μA 2417pF @ 15V 24nC @ 4.5V 30A 61A Tc 30V 244A 213 mJ 2.8V 10V ±12V
    SPW20N60S5FKSA1 SPW20N60S5FKSA1 Infineon Technologies $0.00
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    		 download Tube 2004 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant AVALANCHE RATED TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 208W Tc SWITCHING 0.19Ohm 600V SILICON N-Channel 190m Ω @ 13A, 10V 5.5V @ 1mA 3000pF @ 25V 103nC @ 10V 20A 20A Tc 600V 40A 690 mJ 10V ±20V
    SPP07N60S5 SPP07N60S5 Infineon Technologies $0.00
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    		 download 8 Weeks Through Hole Tube 2004 CoolMOS™ yes Obsolete 1 (Unlimited) 3 10.36mm RoHS Compliant Contains Lead 7.3A 3 AVALANCHE RATED TO-220-3 No SVHC 9.45mm 4.57mm Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Not Halogen Free Single 83W 120 ns 4.5V 600V 83W Tc 7.3A 0.6Ohm 170 ns SILICON N-Channel 600m Ω @ 4.6A, 10V 5.5V @ 350μA 970pF @ 25V 35nC @ 10V 40ns 20 ns 20V 600V 7.3A Tc 14.6A 10V ±20V
    BTS282Z E3180A BTS282Z E3180A Infineon Technologies $0.00
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    		 download Cut Tape (CT) 2001 TEMPFET® Obsolete 1 (Unlimited) TO-263-8, D2Pak (7 Leads + Tab), TO-263CA compliant Surface Mount -40°C~175°C TJ MOSFET (Metal Oxide) 300W Tc N-Channel 6.5m Ω @ 36A, 10V 2V @ 240μA 4800pF @ 25V 232nC @ 10V Temperature Sensing Diode 80A Tc 49V 4.5V 10V ±20V
    SPW12N50C3FKSA1 SPW12N50C3FKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free No AVALANCHE RATED, HIGH VOLTAGE TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-247AD 125W 10 ns 500V 125W Tc 11.6A 0.38Ohm 45 ns SILICON N-Channel 380m Ω @ 7A, 10V 3.9V @ 500μA 1200pF @ 25V 49nC @ 10V 8ns 8 ns 20V 11.6A Tc 560V 34.8A 340 mJ 10V ±20V
    BSO303SPNTMA1 BSO303SPNTMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2002 OptiMOS™ Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant AVALANCHE RATED,LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE 2.35W Ta SWITCHING 0.021Ohm 30V SILICON P-Channel 21m Ω @ 8.9A, 10V 2V @ 100μA 1754pF @ 25V 69nC @ 10V 8.9A 8.9A Ta 30V 35.6A 97 mJ 4.5V 10V ±20V
    SPD30P06P SPD30P06P Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2002 SIPMOS® Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Contains Lead -30A AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ -60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING 260 20 4 R-PSSO-G2 Other Transistors Not Qualified 1 DRAIN Single 125W 125W Tc 30A 0.075Ohm 30 ns SILICON P-Channel 75m Ω @ 21.5A, 10V 4V @ 1.7mA 1535pF @ 25V 48nC @ 10V 11ns 20 ns 20V -60V 30A Tc 60V 120A 250 mJ 10V ±20V
    SPD06N80C3BTMA1 SPD06N80C3BTMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2008 CoolMOS™ yes Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No AVALANCHE RATED, HIGH VOLTAGE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 260 40 3 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 83W 25 ns 800V 83W Tc 6A SWITCHING 0.9Ohm 72 ns SILICON N-Channel 900m Ω @ 3.8A, 10V 3.9V @ 250μA 785pF @ 100V 41nC @ 10V 15ns 8 ns 20V 6A 6A Ta 230 mJ 10V ±20V
    SPD02N50C3 SPD02N50C3 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2002 CoolMOS™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant Contains Lead 1.8A 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC Surface Mount -55°C~150°C TJ 560V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 FET General Purpose Power Not Qualified 1 TO-252AA DRAIN Not Halogen Free Single 25W 10 ns 3V 500V 25W Tc 1.8A 3Ohm 70 ns SILICON N-Channel 3 Ω @ 1.1A, 10V 3.9V @ 80μA 190pF @ 25V 9nC @ 10V 5ns 15 ns 20V 500V 1.8A Tc 5.4A 50 mJ 10V ±20V
    SPP02N60C3HKSA1 SPP02N60C3HKSA1 Infineon Technologies $0.00
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    		 download Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-220-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 25W Tc SWITCHING 3Ohm 600V SILICON N-Channel 3 Ω @ 1.1A, 10V 3.9V @ 80μA 200pF @ 25V 12.5nC @ 10V 1.8A 1.8A Tc 650V 5.4A 50 mJ 10V ±20V
    SPB03N60C3ATMA1 SPB03N60C3ATMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2005 CoolMOS™ no Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Contains Lead No AVALANCHE RATED, HIGH VOLTAGE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 4 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE Halogen Free 38W 7 ns 600V 38W Tc 3.2A SWITCHING 64 ns SILICON N-Channel 1.4 Ω @ 2A, 10V 3.9V @ 135μA 400pF @ 25V 17nC @ 10V 3ns 12 ns 20V 3.2A Tc 650V 9.6A 10V ±20V
    AUIRF3004WL AUIRF3004WL Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount, Through Hole Tube 2011 HEXFET® Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-262-3 Wide Leads No SVHC 11.3mm 4.83mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FET General Purpose Power 1 TO-262AA Single 375W 19 ns 2V 375W Tc 240A SWITCHING 90 ns SILICON N-Channel 1.4m Ω @ 195A, 10V 4V @ 250μA 9450pF @ 32V 210nC @ 10V 220ns 130 ns 20V 40V 2 V 240A Tc 470 mJ 10V ±20V
    IRFP7718PBF IRFP7718PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free 3 TO-247-3 No SVHC 20.7mm 5.31mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 1 TO-247AC DRAIN Single 517W 58 ns 517W Tc 195A SWITCHING 75V 266 ns SILICON N-Channel 1.8m Ω @ 100A, 10V 3.7V @ 250μA 29550pF @ 25V 830nC @ 10V 164ns 160 ns 20V 195A Tc 75V 2004 mJ 6V 10V ±20V
    AUIRFP4110 AUIRFP4110 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2014 HEXFET® Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant ULTRA LOW RESISTANCE TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-247AC DRAIN 370W Tc 120A SWITCHING 0.0045Ohm 100V SILICON N-Channel 4.5m Ω @ 75A, 10V 4V @ 250μA 9620pF @ 50V 210nC @ 10V 120A Tc 100V 670A 190 mJ 10V ±20V
    IPP60R125CPXKSA1 IPP60R125CPXKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2007 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 25A 3 TO-220-3 Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 208W 15 ns 600V 208W Tc 25A SWITCHING 50 ns SILICON N-Channel 125m Ω @ 16A, 10V 3.5V @ 1.1mA 2500pF @ 100V 70nC @ 10V 5ns 20V 25A Tc 650V 82A 708 mJ 10V ±20V
    IPI200N25N3GAKSA1 IPI200N25N3GAKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2011 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 18 ns 250V 300W Tc 64A SWITCHING 0.02Ohm 45 ns SILICON N-Channel 20m Ω @ 64A, 10V 4V @ 270μA 7100pF @ 100V 86nC @ 10V 20ns 12 ns 20V 64A Tc 256A 10V ±20V
    IPB60R099CPAATMA1 IPB60R099CPAATMA1 Infineon Technologies $0.00
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    		 download 8 Weeks Surface Mount Tape & Reel (TR) 2009 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 255W 10 ns 600V 255W Tc 31A SWITCHING 60 ns SILICON N-Channel 105m Ω @ 18A, 10V 3.5V @ 1.2mA 2800pF @ 100V 80nC @ 10V 5ns 20V 31A Tc 800 mJ 10V ±20V
    IPI60R099CPXKSA1 IPI60R099CPXKSA1 Infineon Technologies $0.00
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    		 download 8 Weeks Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 255W Tc SWITCHING 0.099Ohm 600V SILICON N-Channel 99m Ω @ 18A, 10V 3.5V @ 1.2mA 2800pF @ 100V 80nC @ 10V 31A 31A Tc 600V 93A 800 mJ 10V ±20V
    IPW60R125CPFKSA1 IPW60R125CPFKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2011 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 25A 3 TO-247-3 Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 208W 15 ns 600V 208W Tc 25A SWITCHING 50 ns SILICON N-Channel 125m Ω @ 16A, 10V 3.5V @ 1.1mA 2500pF @ 100V 70nC @ 10V 5ns 20V 25A Tc 82A 708 mJ 10V ±20V
    AUIRFP4004 AUIRFP4004 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant No 3 ULTRA-LOW RESISTANCE TO-247-3 No SVHC 20.7mm 5.31mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 380W 59 ns 2V 380W Tc 195A SWITCHING 160 ns SILICON N-Channel 1.7m Ω @ 195A, 10V 4V @ 250μA 8920pF @ 25V 330nC @ 10V 370ns 190 ns 20V 40V 195A Tc 290 mJ 10V ±20V