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  • AUIRF3205ZS

AUIRF3205ZS

MOSFET N-CH 55V 75A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRF3205ZS
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 139
  • Description: MOSFET N-CH 55V 75A D2PAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 170W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 66A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 95ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 67 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 110A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0065Ohm
Factory Lead Time 16 Weeks
Drain to Source Breakdown Voltage 55V
Contact Plating Tin
Mount Surface Mount
Pulsed Drain Current-Max (IDM) 440A
Mounting Type Surface Mount
Avalanche Energy Rating (Eas) 250 mJ
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Height 4.83mm
Length 10.67mm
Number of Pins 3
Width 11.3mm
Transistor Element Material SILICON
Radiation Hardening No
REACH SVHC No SVHC
Operating Temperature -55°C~175°C TJ
RoHS Status ROHS3 Compliant
Packaging Tube
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 170W Tc
Element Configuration Single
See Relate Datesheet