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  • AUIRF3805L-7P

AUIRF3805L-7P

INFINEON AUIRF3805L-7P MOSFET Transistor, N Channel, 240 A, 55 V, 0.002 ohm, 10 V, 2 V


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRF3805L-7P
  • Package: TO-262-7
  • Datasheet: PDF
  • Stock: 265
  • Description: INFINEON AUIRF3805L-7P MOSFET Transistor, N Channel, 240 A, 55 V, 0.002 ohm, 10 V, 2 V (Kg)

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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-7
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 140A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7820pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 130ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 240A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 680 mJ
Height 11.3mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
See Relate Datesheet