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AUIRF3805S-7TRL

MOSFET N-CH 55V 160A HEXFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRF3805S-7TRL
  • Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Datasheet: -
  • Stock: 350
  • Description: MOSFET N-CH 55V 160A HEXFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 140A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7820pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 130ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0026Ohm
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 440 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet