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AUIRF7207QTR

MOSFET P-CH 20V 5.4A 8SOIC


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRF7207QTR
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 261
  • Description: MOSFET P-CH 20V 5.4A 8SOIC (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.4A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time 24ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 5.4A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.06Ohm
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 43A
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet