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  • AUIRF7647S2TR

AUIRF7647S2TR

MOSFET N-CH 100V 5.9A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRF7647S2TR
  • Package: DirectFET™ Isometric SC
  • Datasheet: PDF
  • Stock: 938
  • Description: MOSFET N-CH 100V 5.9A DIRECTFET (Kg)

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Details

Tags

Parameters
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 41W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 41W
Case Connection DRAIN
Turn On Delay Time 5.5 ns
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 31m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.9A Ta 24A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 8.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Polarity/Channel Type P-CHANNEL
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 7.9 ns
Continuous Drain Current (ID) 5.9A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 24A
Drain-source On Resistance-Max 0.031Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 95A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SC
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
See Relate Datesheet