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  • AUIRF7665S2TR

AUIRF7665S2TR

MOSFET N-CH 100V 77A DIRECTFET2


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRF7665S2TR
  • Package: DirectFET™ Isometric SB
  • Datasheet: PDF
  • Stock: 803
  • Description: MOSFET N-CH 100V 77A DIRECTFET2 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N2
Number of Elements 1
Power Dissipation-Max 2.4W Ta 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
Turn On Delay Time 3.8 ns
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 62m Ω @ 8.9A, 10V
Vgs(th) (Max) @ Id 5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 515pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.1A Ta 14.4A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 6.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 7.1 ns
Continuous Drain Current (ID) 14.4A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 77A
Drain-source On Resistance-Max 0.062Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 58A
Height 558.8μm
Length 4.826mm
Width 3.95mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet