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  • AUIRFL024NTR

AUIRFL024NTR

MOSFET N-CH 55V 2.8A SOT-223


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRFL024NTR
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 856
  • Description: MOSFET N-CH 55V 2.8A SOT-223 (Kg)

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Details

Tags

Parameters
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Case Connection DRAIN
Turn On Delay Time 8.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta
Gate Charge (Qg) (Max) @ Vgs 18.3nC @ 10V
Rise Time 13.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17.7 ns
Turn-Off Delay Time 22.2 ns
Continuous Drain Current (ID) 2.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.0028A
Drain-source On Resistance-Max 0.075Ohm
Drain to Source Breakdown Voltage 55V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 9 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
See Relate Datesheet