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  • AUIRFN7107TR

AUIRFN7107TR

MOSFET N-CH 75V 75A 8PQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRFN7107TR
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 906
  • Description: MOSFET N-CH 75V 75A 8PQFN (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 8.5mOhm
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 4.4W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3001pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 300A
DS Breakdown Voltage-Min 75V
RoHS Status RoHS Compliant
See Relate Datesheet