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  • AUIRFN8403TR

AUIRFN8403TR

MOSFET N-CH 40V 95A 8PQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRFN8403TR
  • Package: 8-PowerTDFN
  • Datasheet: -
  • Stock: 782
  • Description: MOSFET N-CH 40V 95A 8PQFN (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IRFN8403
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 4.3W Ta 94W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
Factory Lead Time 11 Weeks
FET Type N-Channel
Mount Surface Mount
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 50A, 10V
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3174pF @ 25V
Package / Case 8-PowerTDFN
Current - Continuous Drain (Id) @ 25°C 95A Tc
Number of Pins 8
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Transistor Element Material SILICON
Rise Time 37ns
Operating Temperature -55°C~175°C TJ
Drain to Source Voltage (Vdss) 40V
Packaging Tape & Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Published 2013
Series HEXFET®
Fall Time (Typ) 26 ns
Turn-Off Delay Time 33 ns
Part Status Not For New Designs
Continuous Drain Current (ID) 95A
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0033Ohm
Pulsed Drain Current-Max (IDM) 492A
Number of Terminations 5
DS Breakdown Voltage-Min 40V
Height 1.17mm
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Length 5.85mm
Width 5mm
Subcategory FET General Purpose Power
RoHS Status ROHS3 Compliant
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
See Relate Datesheet