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AUIRFR2307Z

MOSFET N-CH 75V 42A DPAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRFR2307Z
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 720
  • Description: MOSFET N-CH 75V 42A DPAK (Kg)

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Details

Tags

Parameters
Operating Temperature -55°C~175°C TJ
Length 6.73mm
Packaging Tube
Width 6.22mm
Published 2010
Radiation Hardening No
REACH SVHC No SVHC
Series HEXFET®
RoHS Status ROHS3 Compliant
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 65ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 29 ns
Factory Lead Time 26 Weeks
Contact Plating Tin
Turn-Off Delay Time 44 ns
Mount Surface Mount
Continuous Drain Current (ID) 42A
Mounting Type Surface Mount
JEDEC-95 Code TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Gate to Source Voltage (Vgs) 20V
Number of Pins 3
Drain to Source Breakdown Voltage 75V
Transistor Element Material SILICON
Height 2.39mm
See Relate Datesheet