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AUIRFR3806TRL

MOSFET N-CH 60V 43A DPAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRFR3806TRL
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 408
  • Description: MOSFET N-CH 60V 43A DPAK (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 50V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Factory Lead Time 16 Weeks
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 60V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Surface Mount YES
JEDEC-95 Code TO-252AA
Transistor Element Material SILICON
Drain Current-Max (Abs) (ID) 43A
Drain-source On Resistance-Max 0.0158Ohm
Pulsed Drain Current-Max (IDM) 170A
Operating Temperature -55°C~175°C TJ
DS Breakdown Voltage-Min 60V
Packaging Tape & Reel (TR)
Avalanche Energy Rating (Eas) 73 mJ
RoHS Status ROHS3 Compliant
Published 2011
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
See Relate Datesheet