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  • AUIRFR5505TRL

AUIRFR5505TRL

MOSFET P-CH 55V 18A DPAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRFR5505TRL
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 918
  • Description: MOSFET P-CH 55V 18A DPAK (Kg)

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Shipping Cost

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Shipping Method

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 57W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 57W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 9.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 28ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 18A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.11Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 64A
Avalanche Energy Rating (Eas) 150 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet