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AUIRFS8403

MOSFET N-CH 40V 123A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRFS8403
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 556
  • Description: MOSFET N-CH 40V 123A D2PAK (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 99W Tc
Element Configuration Single
Power Dissipation 99W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3183pF @ 25V
Current - Continuous Drain (Id) @ 25°C 123A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Rise Time 77ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 43 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 123A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 3.183nF
Drain to Source Resistance 2.6mOhm
Rds On Max 3.3 mΩ
Nominal Vgs 3 V
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet