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AUIRGP35B60PD-E

AUIRGP35B60PD-E datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRGP35B60PD-E
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 438
  • Description: AUIRGP35B60PD-E datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
IGBT Type NPT
Gate Charge 55nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 26ns/110ns
Switching Energy 220μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 16ns
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 308W
Number of Elements 1
Rise Time-Max 11ns
Element Configuration Single
Power Dissipation 308W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.55V
Max Collector Current 60A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.15V
Turn On Time 34 ns
Test Condition 390V, 22A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 35A
Turn Off Time-Nom (toff) 142 ns
See Relate Datesheet