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AUIRGP50B60PD1

AUIRGP50B60PD1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRGP50B60PD1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 406
  • Description: AUIRGP50B60PD1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 390W
Number of Elements 1
Rise Time-Max 15ns
Element Configuration Single
Power Dissipation 390W
Input Type Standard
Turn On Delay Time 40 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 150 ns
Collector Emitter Voltage (VCEO) 2.85V
Max Collector Current 75A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.35V
Turn On Time 39 ns
Test Condition 390V, 33A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 50A
Turn Off Time-Nom (toff) 161 ns
IGBT Type NPT
Gate Charge 205nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 30ns/130ns
Switching Energy 255μJ (on), 375μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 15ns
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet