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  • AUIRL7732S2TR

AUIRL7732S2TR

MOSFET N-CH 40V 14A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRL7732S2TR
  • Package: DirectFET™ Isometric SC
  • Datasheet: PDF
  • Stock: 808
  • Description: MOSFET N-CH 40V 14A DIRECTFET (Kg)

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Details

Tags

Parameters
Vgs(th) (Max) @ Id 2.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2020pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Rise Time 123ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 58A
Drain-source On Resistance-Max 0.0066Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 230A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SC
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 41W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.6m Ω @ 35A, 10V
See Relate Datesheet