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AUIRL7736M2TR

MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRL7736M2TR
  • Package: DirectFET™ Isometric M4
  • Datasheet: PDF
  • Stock: 163
  • Description: MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric M4
Number of Pins 9
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Additional Feature HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 63W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 63W
Case Connection DRAIN
Turn On Delay Time 48 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 67A, 10V
Vgs(th) (Max) @ Id 2.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 5055pF @ 25V
Current - Continuous Drain (Id) @ 25°C 179A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 4.5V
Rise Time 210ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 76 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 179A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.003Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 450A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet