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AUIRL7766M2TR

MOSFET N-CH 100V 10A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRL7766M2TR
  • Package: DirectFET™ Isometric M4
  • Datasheet: PDF
  • Stock: 972
  • Description: MOSFET N-CH 100V 10A DIRECTFET (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric M4
Number of Pins 9
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 62.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 62.5W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 2.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 5305pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 66nC @ 4.5V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 49 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 51A
Drain-source On Resistance-Max 0.01Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 204A
Avalanche Energy Rating (Eas) 237 mJ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet