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  • AUIRLL014NTR

AUIRLL014NTR

MOSFET N-CH 55V 2A SOT-223


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRLL014NTR
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 668
  • Description: MOSFET N-CH 55V 2A SOT-223 (Kg)

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The following are some common countries' logistic time.
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Details

Tags

Parameters
Power Dissipation 1W
Turn On Delay Time 5.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 4.9ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 2.9 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 2A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 2.8A
Drain to Source Breakdown Voltage 55V
Height 1.8mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 9 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series Automotive, AEC-Q101, HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Configuration Single
Power Dissipation-Max 1W Ta
See Relate Datesheet