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AUIRLL024ZTR

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRLL024ZTR
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 381
  • Description: Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Configuration Single
Power Dissipation-Max 1W Ta
Power Dissipation 1W
Turn On Delay Time 8.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 60m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Rise Time 33ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 5A
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet