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  • AUIRLR3410

AUIRLR3410

AUIRLR3410 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRLR3410
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 199
  • Description: AUIRLR3410 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 79W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 79W
Case Connection DRAIN
Turn On Delay Time 7.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 5V
Rise Time 53ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 17A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 60A
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 39 Weeks
Contact Plating Tin
See Relate Datesheet