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  • AUIRLZ44Z

AUIRLZ44Z

MOSFET N-CH 55V 51A TO-220AB


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-AUIRLZ44Z
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 650
  • Description: MOSFET N-CH 55V 51A TO-220AB (Kg)

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Number of Elements 1
Power Dissipation-Max 80W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 80W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.5m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 5V
Rise Time 160ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 51A
Threshold Voltage 1V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 204A
Avalanche Energy Rating (Eas) 78 mJ
Height 16.51mm
Length 10.67mm
Factory Lead Time 16 Weeks
Mount Through Hole
Width 4.83mm
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series HEXFET®
Radiation Hardening No
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH SVHC No SVHC
Number of Terminations 3
ECCN Code EAR99
See Relate Datesheet