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BA779-HG3-08

BA779-HG3-08 datasheet pdf and Diodes - RF product details from Vishay Semiconductor Diodes Division stock available at Feilidi


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Origchip NO: 884-BA779-HG3-08
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 608
  • Description: BA779-HG3-08 datasheet pdf and Diodes - RF product details from Vishay Semiconductor Diodes Division stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 7 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Weight 8.107964mg
Diode Element Material SILICON
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.80
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Number of Elements 1
Max Current Rating 50mA
Element Configuration Single
Diode Type PIN - Single
Forward Current 50mA
Application ATTENUATOR
Forward Voltage 1V
Capacitance @ Vr, F 0.5pF @ 0V 100MHz
Reverse Voltage 30V
Frequency Band HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Resistance @ If, F 50Ohm @ 1.5mA 100MHz
Diode Capacitance-Max 0.5pF
Minority Carrier Lifetime-Nom 4 μs
RoHS Status ROHS3 Compliant
See Relate Datesheet