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BAP65-05W,115

BAP65-05W,115 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi


  • Manufacturer: NXP USA Inc.
  • Origchip NO: 568-BAP65-05W,115
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 289
  • Description: BAP65-05W,115 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi (Kg)

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Details

Tags

Parameters
Configuration COMMON CATHODE, 2 ELEMENTS
Power Dissipation-Max 240mW
Diode Type PIN - 1 Pair Common Cathode
Application ATTENUATOR; SWITCHING
Current - Max 100mA
Capacitance @ Vr, F 0.425pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 30V
Breakdown Voltage-Min 30V
Diode Capacitance-Nom 0.7pF
Resistance @ If, F 350mOhm @ 100mA 100MHz
Diode Capacitance-Max 0.9pF
Minority Carrier Lifetime-Nom 0.17 μs
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 0.9Ohm
RoHS Status ROHS3 Compliant
Factory Lead Time 13 Weeks
Package / Case SC-70, SOT-323
Surface Mount YES
Diode Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.10.00.70
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP65-05
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 2
See Relate Datesheet