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BC517G

BC517G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-BC517G
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: -
  • Stock: 784
  • Description: BC517G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Contact Plating Copper, Silver, Tin
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC517
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30000 @ 20mA 2V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 1V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 10V
hFE Min 30
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet