BD6563FV-LBE2

BD6563FV-LBE2 Overview

In order to increase flexibility, the package 16-LSSOP (0.173, 4.40mm Width) is used.A packaging method of Tape & Reel (TR) is used.3 drivers are incorporated for its configuration.In this case, gate drivers is mounted along the way of Surface Mount.In the absence of a 10V~25V supply voltage, it can demonstrate its superiority.This device is designed with a IGBT, N-Channel, P-Channel MOSFET gate type.Temperature range -25°C~150°C TJ is allowed for this device.Mosfet driver accepts input of type Non-Inverting.Its configuration is based on a total of 16 terminations.In this case, Surface Mount indicates how the device is mounted.The pins are configured with 16 when designing the chip.There is an interface IC called BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER that is employed in this device.There is a maximum output current of 600mA.Several electronic components are included in its subcategory of Other Interface ICs.For its basis, 6 outputs are integrated.According to its maximum power dissipation, 870mW is capable of conducting and transferring a large amount of power without overheating.Keeping the supply current at 1mA ensures greater stability.

BD6563FV-LBE2 Features

Embedded in the Tape & Reel (TR) package
3 drivers
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
16 pins
Maximum power dissipation of 870mW

BD6563FV-LBE2 Applications

There are a lot of ROHM Semiconductor BD6563FV-LBE2 gate drivers applications.

• Isolated switch mode power supplies (SMPS)
• Dual-Battery Systems
• Power factor correction (PFC) circuits
• Commercial air-conditioning (CAC)
• Isolated Supplies for Motor Control
• High current laser/LED systems
• Motor controllers
• Refrigerator
• White Goods - Air Conditioner, Washing Machine,
• Driving GaN Power Transistors used in Full or Half?Bridge, LLC,