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BDV65BG

BDV65BG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-BDV65BG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 543
  • Description: BDV65BG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 125W
Peak Reflow Temperature (Cel) 260
Current Rating 10A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 125W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 2V @ 20mA, 5A
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet