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BF517E6327HTSA1

BF517E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BF517E6327HTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: -
  • Stock: 134
  • Description: BF517E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 280mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 2.5GHz
Number of Elements 1
Configuration SINGLE
Power Dissipation 280mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 25mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 15V
Current - Collector (Ic) (Max) 25mA
Transition Frequency 2000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2.5V
Collector-Base Capacitance-Max 0.75pF
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet