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BF999E6327HTSA1

MOSFET N-CH RF 20V 30MA SOT-23


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BF999E6327HTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 696
  • Description: MOSFET N-CH RF 20V 30MA SOT-23 (Kg)

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Means of Payment

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RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 30mA
Frequency 45MHz
Number of Elements 1
Configuration SINGLE
Number of Channels 1
Operating Mode DEPLETION MODE
Current - Test 10mA
Halogen Free Not Halogen Free
Transistor Type N-Channel
Continuous Drain Current (ID) 30mA
Gate to Source Voltage (Vgs) 12V
Gain 27dB
FET Technology METAL-OXIDE SEMICONDUCTOR
Noise Figure 2.1dB
Voltage - Test 10V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet