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BFP520H6327XTSA1

RF Bipolar Transistors RF BIP TRANSISTOR


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BFP520H6327XTSA1
  • Package: SC-82A, SOT-343
  • Datasheet: PDF
  • Stock: 516
  • Description: RF Bipolar Transistors RF BIP TRANSISTOR (Kg)

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Details

Tags

Parameters
Collector Emitter Voltage (VCEO) 2.5V
Factory Lead Time 4 Weeks
Max Collector Current 40mA
Contact Plating Tin
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 20mA 2V
Mount Surface Mount
Collector Emitter Breakdown Voltage 3.5V
Mounting Type Surface Mount
Gain 22.5dB
Package / Case SC-82A, SOT-343
Transition Frequency 45000MHz
Number of Pins 4
Max Breakdown Voltage 3.5V
Transistor Element Material SILICON
Collector Base Voltage (VCBO) 10V
Operating Temperature 150°C TJ
Emitter Base Voltage (VEBO) 1V
Packaging Tape & Reel (TR)
Noise Figure (dB Typ @ f) 0.95dB @ 1.8GHz
Published 2005
Height 900μm
JESD-609 Code e3
Length 2mm
Pbfree Code yes
Width 1.25mm
Radiation Hardening No
Part Status Active
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Lead Free
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 100mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 45GHz
Base Part Number BFP520
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 100mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
See Relate Datesheet