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BFP840FESDH6327XTSA1

RF Bipolar Transistors RF BIP TRANSISTORS


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BFP840FESDH6327XTSA1
  • Package: SC-82A, SOT-343
  • Datasheet: PDF
  • Stock: 683
  • Description: RF Bipolar Transistors RF BIP TRANSISTORS (Kg)

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Details

Tags

Parameters
Lead Free Lead Free
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4
Transistor Element Material SILICON GERMANIUM CARBON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 75mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 85GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP840
Number of Elements 1
Element Configuration Dual
Power Dissipation 75mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2.25V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA 1.8V
Collector Emitter Breakdown Voltage 2.6V
Gain 35dB
Transition Frequency 85000MHz
Max Breakdown Voltage 2.6V
Collector Base Voltage (VCBO) 2.9V
Emitter Base Voltage (VEBO) 2.6V
Continuous Collector Current 35mA
Noise Figure (dB Typ @ f) 0.75dB @ 5.5GHz
RoHS Status ROHS3 Compliant
See Relate Datesheet