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BFR843EL3E6327XTSA1

The BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor.


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BFR843EL3E6327XTSA1
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 809
  • Description: The BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Gold (Au)
Max Power Dissipation 125mW
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE
Case Connection EMITTER
Power - Max 125mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2.25V
Max Collector Current 55mA
Collector Emitter Breakdown Voltage 2.6V
Gain 25.5dB
Max Breakdown Voltage 2.6V
Collector Base Voltage (VCBO) 2.9V
Highest Frequency Band X B
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet