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BLA6G1011L-200RG,1

RF FET LDMOS 65V 20DB SOT502D


  • Manufacturer: Ampleon USA Inc.
  • Origchip NO: 38-BLA6G1011L-200RG,1
  • Package: SOT-502D
  • Datasheet: PDF
  • Stock: 426
  • Description: RF FET LDMOS 65V 20DB SOT502D (Kg)

Purchase & Inquiry

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Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 13 Weeks
Package / Case SOT-502D
Surface Mount YES
Transistor Element Material SILICON
Packaging Tray
Published 2011
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 65V
Current Rating (Amps) 49A
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Frequency 1.03GHz~1.09GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BLA6G1011
Reference Standard IEC-60134
JESD-30 Code R-CDFM-F2
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 100mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 20dB
Drain Current-Max (Abs) (ID) 49A
DS Breakdown Voltage-Min 65V
Power - Output 200W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
See Relate Datesheet