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BLT80,115

RF Bipolar Transistors NPN 7.5V 250mA UHF


  • Manufacturer: NXP USA Inc.
  • Origchip NO: 568-BLT80,115
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 514
  • Description: RF Bipolar Transistors NPN 7.5V 250mA UHF (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
HTS Code 8541.29.00.75
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BLT80
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 2W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 150mA 5V
Voltage - Collector Emitter Breakdown (Max) 10V
Current - Collector (Ic) (Max) 250mA
Frequency - Transition 900MHz
Power Dissipation-Max (Abs) 2W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 3.5pF
Power Dissipation Ambient-Max 2W
RoHS Status ROHS3 Compliant
See Relate Datesheet