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BS170-D75Z

In a Pack of 25, ON Semiconductor, BS170-D75Z Digital Transistor, 3-Pin TO-92


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-BS170-D75Z
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 102
  • Description: In a Pack of 25, ON Semiconductor, BS170-D75Z Digital Transistor, 3-Pin TO-92 (Kg)

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Details

Tags

Parameters
Base Part Number BS170
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 830mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Factory Lead Time 11 Weeks
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.5A
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Drain-source On Resistance-Max 5Ohm
Surface Mount NO
DS Breakdown Voltage-Min 60V
Transistor Element Material SILICON
Feedback Cap-Max (Crss) 10 pF
RoHS Status ROHS3 Compliant
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
See Relate Datesheet