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BS2114F-E2

Surface Mount Active EAR99 Gate Drivers ICs Inverting 2 600V V 8-SOIC (0.173, 4.40mm Width) High-Side or Low-Side

Manufacturer: ROHM Semiconductor
Origchip NO: 687-BS2114F-E2
Package: 8-SOIC (0.173, 4.40mm Width)
Datasheet: PDF
Stock: 611
Description: Surface Mount Active EAR99 Gate Drivers ICs Inverting 2 600V V 8-SOIC (0.173, 4.40mm Width) High-Side or Low-Side (Kg)

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Details

Tags

Parameters
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.173, 4.40mm Width)
Surface Mount	YES
Operating Temperature	-40°C~125°C TA
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Voltage - Supply	10V~20V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Number of Functions	1
Supply Voltage	15V
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G8
Input Type	Inverting
Rise / Fall Time (Typ)	30ns 30ns
Interface IC Type	HALF BRIDGE BASED MOSFET DRIVER
Channel Type	Independent
Number of Drivers	2
Turn On Time	0.37 µs
Driven Configuration	High-Side or Low-Side
Gate Type	IGBT, N-Channel MOSFET
High Side Driver	YES
Logic Voltage - VIL, VIH	0.8V 2.6V
Turn Off Time	0.37 µs
High Side Voltage - Max (Bootstrap)	600V
Height Seated (Max)	1.71mm
Length	5mm
Width	4.4mm
RoHS Status	ROHS3 Compliant

BS2114F-E2 Overview

A higher degree of flexibility is achieved by adopting its 8-SOIC (0.173, 4.40mm Width) package.A total of 2 drivers are integrated into its configuration.Surface Mount is the way in which it is mounted.In the absence of a 10V~20V supply voltage, its superiority can be demonstrated.A gate type of IGBT, N-Channel MOSFET has been used in its design.-40°C~125°C TA is the allowed temperature range for this device.Mosfet driver uses Inverting as Mosfet drivers input type.It's configured with 8 terminations.The device is specifically designed to function with a supply voltage of 15V V.HALF BRIDGE BASED MOSFET DRIVER is employed as its interface IC.Ideally, the high-side voltage should not exceed 600V.

BS2114F-E2 Features

2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 600V

BS2114F-E2 Applications

There are a lot of ROHM Semiconductor BS2114F-E2 gate drivers applications.

Power factor correction (PFC) circuits
UPS systems
White Goods - Air Conditioner, Washing Machine,
Pulse transformer drivers
High current laser/LED systems
serial peripheral interface (SPI), I2C
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
AC-DC Inverters
Solar power supplies
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,