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BSB008NE2LXXUMA1

MOSFET N-CH 25V 46A 2WDSON


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSB008NE2LXXUMA1
  • Package: 3-WDSON
  • Datasheet: PDF
  • Stock: 223
  • Description: MOSFET N-CH 25V 46A 2WDSON (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-WDSON
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series OptiMOS™
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Silver/Nickel (Ag/Ni)
Additional Feature ULTRA LOW RESISTANCE
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 12.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 0.8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 16000pF @ 12V
Current - Continuous Drain (Id) @ 25°C 46A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 343nC @ 10V
Rise Time 47.2ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 32.4 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 180A
Drain-source On Resistance-Max 0.0008Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 600 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet