English

All Products

View All >>
  • BSB008NE2LXXUMA1

BSB008NE2LXXUMA1

MOSFET N-CH 25V 46A 2WDSON


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSB008NE2LXXUMA1
  • Package: 3-WDSON
  • Datasheet: PDF
  • Stock: 223
  • Description: MOSFET N-CH 25V 46A 2WDSON (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-WDSON
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series OptiMOS™
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Silver/Nickel (Ag/Ni)
Additional Feature ULTRA LOW RESISTANCE
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 12.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 0.8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 16000pF @ 12V
Current - Continuous Drain (Id) @ 25°C 46A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 343nC @ 10V
Rise Time 47.2ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 32.4 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 180A
Drain-source On Resistance-Max 0.0008Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 600 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet