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BSB012NE2LX

BSB012NE2LX datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSB012NE2LX
  • Package: 3-WDSON
  • Datasheet: PDF
  • Stock: 343
  • Description: BSB012NE2LX datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 12V
Current - Continuous Drain (Id) @ 25°C 37A Ta 170A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 39A
Drain-source On Resistance-Max 0.0012Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 285 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Mounting Type Surface Mount
Package / Case 3-WDSON
Surface Mount YES
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Pin Count 2
JESD-30 Code R-MBCC-N2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 57W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.7 ns
See Relate Datesheet