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  • BSB056N10NN3GXUMA1

BSB056N10NN3GXUMA1

Trans MOSFET N-CH 100V 9A 7-Pin WDSON


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSB056N10NN3GXUMA1
  • Package: 3-WDSON
  • Datasheet: PDF
  • Stock: 362
  • Description: Trans MOSFET N-CH 100V 9A 7-Pin WDSON (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Contact Plating Silver
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-WDSON
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 78W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 50V
Current - Continuous Drain (Id) @ 25°C 9A Ta 83A Tc
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 9A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.0056Ohm
Avalanche Energy Rating (Eas) 450 mJ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet